EUV Lithography

In semiconductor chip production, lithography is a critical manufacturing method utilized to ensure both sufficient quality and high throughput. Optical lithography remains the traditional technique used in the semiconductor industry.

Having reached the technological limits of optical lithography, the semiconductor industry has spent several years identifying potential successor technologies in order to produce even smaller chip features (<100 nm). Next-generation lithography technologies investigated by the semiconductor industry include EUV lithography, x-ray lithography, ion-beam projection lithography, and electron-beam projection lithography. Although EUV lithography has its share of challenges, it has become the choice of the semiconductor industry for the future because it retains the look and feel of the traditional optical lithography process and uses the same basic design tools.

Since the 13.5 nm (~92 eV) wavelength utilized for the EUV lithography process is absorbed in air and requires a high vacuum for transmission, working with this wavelength poses extreme challenges to all production tools. First, the light source has to deliver a narrow band of high EUV power (preferably with high spectral purity) in order to guarantee high throughput. Additionally, all components that move the mask and the wafer with nanometer-range precision must be operated in an ultra-high-vacuum (UHV) environment. Furthermore, the projection optics need to deliver dynamic positioning precision in the Å range and be free of contamination (to the ‘few nanometers’ level) in order to deliver high efficiency.

PI’s Picks

These soft x-ray imaging systems are among the tools of choice for EUV lithography:

PIXIS-XO and PyLoN-XO CCD cameras from PI provide 16-bit digitization, excellent resolution for spectral analysis, and ultra-high-vacuum compatibility.

Another option, our uniquely designed PI-MTE, delivers reliable, deep-cooled CCD performance even when the compact camera is positioned on a movable arm in a high-vacuum environment.

Each of these high-sensitivity, wide-dynamic-range cameras utilizes a special back-illuminated CCD without antireflective coating for direct soft x-ray and EUV imaging.

xray plasma diagnostics

Brochures

X-Ray Camera Brochure
Comprehensive information on direct and indirect X-ray detection technologies from Princeton Instruments. Includes related application and technical notes.

PIXIS-XF<br>  间接探测型X射线相机

PIXIS-XF
间接探测型X射线相机

2kx2k像素分辨率,光钎耦合,探测能量从4 keV 到 >50 keV



LightField <br> 科学成像及光谱分析软件

LightField
科学成像及光谱分析软件

普林斯顿仪器的智能控制软件,您从未体验过的全新设计!



PIXIS-XO <br> 软X射线相机

PIXIS-XO
软X射线相机

开口型设计,用于直接探测深紫外和低能量X射线,光子能量在<30eV至20keV



PI-MTE<br>  真空内相机

PI-MTE
真空内相机

最小巧,真空兼容,直接探测型X射线相机,探测能量从< 30 eV ~ 20 KeV



 

特色产品 EUV Lithography

PIXIS-XO <br> 软X射线相机

PIXIS-XO
软X射线相机

开口型设计,用于直接探测深紫外和低能量X射线,光子能量在<30eV至20keV


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